- 您现在的位置：买卖IC网 > Sheet目录515 > SIR698DP-T1-GE3 (Vishay Siliconix)MOSFET N-CHAN 100V(D-S)POWERPAK
SiR698DP
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V GS(th) Temperature Coefficient
V DS
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
100
- 7.1
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
2.5
3.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 100 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
10
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 2.5 A
V GS = 6 V, I D = 2.3 A
V DS = 10 V, I D = 2.5 A
0.162
0.190
5.3
0.195
0.230
Ω
S
Dynamic b
Input Capacitance
C iss
210
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
Q g
Q gs
Q gd
V DS = 50 V, V GS = 0 V, f = 1 MHz
V DS = 50 V, V GS = 10 V, I D = 2.5 A
35
15
5.2
1.1
1.9
8
pF
nC
Gate Resistance
R g
f = 1 MHz
0.34
1.7
3.4
Ω
Turn-On Delay Time
t d(on)
7
15
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, R L = 50 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
11
8
11
20
15
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
8
10
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 2.2 A
I F = 2.2 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
40
45
22
18
1.2
80
90
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67918
S11-2524-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SIR800DP-T1-GE3
MOSFET N-CH 20V 8-SOIC
SIR802DP-T1-GE3
MOSFET N-CH D-S 20V 8-SOIC
SIR826DP-T1-GE3
MOSFET N-CH 80V 60A POWERPAK
SIR844DP-T1-GE3
MOSFET N-CH D-S 25V 8-SOIC
SIR846ADP-T1-GE3
MOSFET N-CH 100V 60A SO8
SIR850DP-T1-GE3
MOSFET N-CH 25V 30A PPAK 8SOIC
SIR862DP-T1-GE3
MOSFET N-CH 25V 8-SOIC
SIR878ADP-T1-GE3
MOSFET N-CH 100V 40A POWERPAK
相关代理商/技术参数
SIR770DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIR770DP-T1-GE3
功能描述:MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR774DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiR774DP-T1-GE3
功能描述:MOSFET 30 Volts 40 Amps 62.5 Watts
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR788DP-T1-GE3
功能描述:MOSFET 30V 60A 48W 3.4mohm @ 10V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiR798DP-T1-GE3
功能描述:MOSFET 30 Volts 60 Amps 83 Watts
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR800DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET
SIR800DP-T1-GE3
功能描述:MOSFET 20V 50A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube